FQPF6N60 600V N-Channel MOSFET

Type Designator: FQPF6N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 44 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 3.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 20 nC
Rise Time (tr): 70 nS
Drain-Source Capacitance (Cd): 95 pF
Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm
Package: TO-220F